Author Affiliations
Abstract
1 The Shanghai Institute of Laser Plasma, Shanghai 201800, China
2 The IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240, China
3 The Shanghai Institute of Optics and Fine Mechanics, Shanghai 201800, China
4 The Laser Fusion Research Center, Mianyang 621900, China
An attosecond precision and femtosecond range timing jitter measurement and control technique is proposed. It is based on the modulation of the combined pulse induced by relative time delay of individual pulses. The core of this timing jitter detection method is the integrated technique of optical cross correlation and electrical energy interferometry. To illustrate this technique, a proof-of-principle experiment is demonstrated based on two 237 fs pulses. The peak-to-valley timing jitter of the two pulses to be combined is less than 700 as in 1 h and the average efficiency of coherent beam combining could reach to 91.6%.
Coherent beam combining electrical energy interferometry optical cross correlation timing jitter 
Collection Of theses on high power laser and plasma physics
2016, 14(1): 2215
作者单位
摘要
1 中山大学光电材料与技术国家重点实验室, 广东 广州 510275
2 中山大学化学与化工学院, 广东 广州 510275
采用稳态发光光谱、瞬态发光动力学测量等手段,对两种钌配合物[Ru(bpy)3](ClO4)2和[Ru(bpy)2HPIP](ClO4)2的发光性质进行了研究。稳态发光光谱表明[Ru(bpy)2HPIP](ClO4)2发光明显偏弱;皮秒瞬态发光动力学测量显示[Ru(bpy)2HPIP](ClO4)2的激发态弛豫过程存在皮秒量级的快过程,可能与由于HPIP配体的存在,使电荷转移态和溶剂分子产生氢键作用有关。纳秒瞬态发光动力学测量的结果则显示了所有样品共同具有的瞬态发光衰减过程,实验结果符合能隙定律,推断其来自没有和溶剂分子形成氢键结合的配合物的激发态弛豫过程。
激光光学 瞬态发光动力学 时间分辨光谱技术 钌配合物 激发态弛豫 
光学学报
2011, 31(8): 0830001
作者单位
摘要
Dept. of Sol. Stat. Electr., Huazhong Univ. of Sci. and Techn., Wuhan 430074, CHN
Conductivity Instability Nanocrystalline Silicon Film 
半导体光子学与技术
1999, 5(1): 41
作者单位
摘要
Dept. of Electron. Sci. & Eng., Huazhong University of Sci. & Tech., Wuhan 430074, CHN
Ar/CF 4 plasma ITO Reactive Ion Etching TFT-AMLCD 
半导体光子学与技术
1998, 4(3): 188
作者单位
摘要
Dept. of S. S. Electron., Huazhong University of Sci. and Tech., Wuhan 430074, CHN
Conductivity Energy Band Diagram Nanocrystalline Silicon Film 
半导体光子学与技术
1998, 4(2): 84
作者单位
摘要
Huazhong University of Science and Technolopy, Wuhan 430074, CHN
Amorphous Semiconductor Photodetector Semiconductor Technology 
半导体光子学与技术
1997, 3(1): 20
作者单位
摘要
Huanzhong Univ. of Sci. and Tech., Wuhan 430074, CHN
Amorphous Semiconductors Amorphous Silicon Films Density Measurement Error Analysis 
半导体光子学与技术
1996, 2(2): 84

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!